PMBD7000,215 NXP Semiconductors, PMBD7000,215 Datasheet - Page 4

• Manufacturer Part Number: PMBD7000,215
• Description: DIODE SW DBL 100V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBD7000,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 100V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.1@0.1AV
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1736-2; 933859210215; PMBD7000 T/R

NXP Semiconductors
7. Characteristics
PMBD7000
Product data sheet
Fig 1.
(mA)
I
F
300
200
100
0
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curve
0
Table 7.
T
[1]
[2]
Symbol
Per diode
V
I
C
t
V
R
rr
j
F
FR
d
= 25
100
When switched from I
When switched from I
single diode loaded
double diode loaded
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Characteristics
T
amb
(°C)
All information provided in this document is subject to legal disclaimers.
mbd033
Rev. 4 — 16 September 2010
F
F
200
= 10 mA to I
= 10 mA; t
r
= 20 ns.
R
= 10 mA; R
I
f = 1 MHz; V
Conditions
I
I
I
I
V
V
V
Fig 2.
F
F
F
F
F
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 150 mA
= 50 V
= 100 V
= 50 V; T
(mA )
(1) T
(2) T
(3) T
300
200
100
I
F
0
0
Forward current as a function of forward
voltage
L
j
j
j
= 100 Ω; measured at I
= 150 °C; typical values
= 25 °C; typical values
= 25 °C; maximum values
j
R
= 150 °C
= 0 V
Double high-speed switching diode
(1)
[1]
[2]
1
Min
-
-
-
-
-
-
-
-
-
-
-
R
(2)
= 1 mA.
PMBD7000
V
(3)
F
Typ
550
670
-
0.75
-
-
-
-
-
-
-
(V)
© NXP B.V. 2010. All rights reserved.
mbg382
Max
700
820
1
1.1
1.25
300
500
100
1.5
4
1.75
2
Unit
mV
mV
V
V
V
nA
nA
μA
pF
ns
V
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