PMBD7000,215 NXP Semiconductors, PMBD7000,215 Datasheet - Page 5

• Manufacturer Part Number: PMBD7000,215
• Description: DIODE SW DBL 100V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBD7000,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 100V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.1@0.1AV
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1736-2; 933859210215; PMBD7000 T/R

NXP Semiconductors
PMBD7000
Product data sheet
Fig 3.
Fig 5.
I
FSM
(A)
10
10
10
−1
1
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
Non-repetitive peak forward current as a
Diode capacitance as a function of reverse voltage; typical values
j
= 25 °C; prior to surge
10
amb
= 25 °C
10
2
(pF )
C
0.8
0.6
0.4
0.2
d
10
0
3
0
All information provided in this document is subject to legal disclaimers.
t
p
(μs)
mbg704
Rev. 4 — 16 September 2010
10
4
4
8
Fig 4.
(nA)
(1) V
(2) V
(3) V
I
R
10
10
10
10
10
12
5
4
3
2
0
Reverse current as a function of junction
temperature
R
R
R
V
= 50 V; maximum values
= 30 V; typical values
= 50 V; typical values
R
mbg446
(V)
(1)
16
Double high-speed switching diode
(2)
100
(3)
PMBD7000
T
j
(°C)
© NXP B.V. 2010. All rights reserved.
mbg378
200
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