BLF6G10S-45 NXP Semiconductors, BLF6G10S-45 Datasheet - Page 5

• Manufacturer Part Number: BLF6G10S-45
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10S-45

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Package / Case: SOT-608-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 23@28VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10S-45,112

NXP Semiconductors
8. Test information
BLF6G10S-45_3
Product data sheet
Fig 4.
(dB)
G
(1) f = 955 MHz.
(2) f = 925 MHz.
p
25
23
21
19
17
20
V
f
efficiency as functions of average load power;
typical values
2-carrier W-CDMA power gain and drain
2
DS
= 957.5 MHz; carrier spacing 5 MHz.
= 28 V; I
(1)
(2)
24
Dq
= 350 mA; f
η
Fig 6.
G
D
p
28
input
50 Ω
1
Test circuit for operation at 900 MHz
= 952.5 MHz;
(1) (2)
32
P
L(AV)
001aaf994
C1
(dBm)
V
GS
C8
Rev. 03 — 20 January 2010
36
C10
16
12
8
4
0
(%)
η
C2
D
C9
R1
C3
Fig 5.
C11
ACPR
(dBc)
C4
(1) f = 955 MHz.
(2) f = 925 MHz.
−40
−45
−50
−55
−60
20
V
2-carrier W-CDMA adjacent channel power
ratio as function of average load power;
typical values
DS
R3
= 28 V; I
C12
24
C6
Dq
(1)
(2)
= 350 mA; carrier spacing 5 MHz.
C13 C14
C5
BLF6G10S-45
28
Power LDMOS transistor
C15
C7
R2
F1
32
P
© NXP B.V. 2010. All rights reserved.
L(AV)
C16
001aaf997
V
(dBm)
DS
001aaf995
36
output
50 Ω
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