BLF6G10S-45 NXP Semiconductors, BLF6G10S-45 Datasheet
BLF6G10S-45
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BLF6G10S-45 Summary of contents
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... BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
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... Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Rev. 03 — 20 January 2010 BLF6G10S-45 Power LDMOS transistor Simplified outline Symbol 1 [ Min - −0.5 - −65 - ...
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... RF performance at V class-AB production test circuit. Symbol η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10S-45 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 350 mA BLF6G10S-45_3 Product data sheet Characteristics C per section; unless otherwise specified. drain-source breakdown voltage ...
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... BLF6G10S-45_3 Product data sheet (dB 001aaf992 70 η D η (%) IMD D (dBc − (W) L(PEP) = 960 MHz; 1 Fig 3. Rev. 03 — 20 January 2010 BLF6G10S-45 Power LDMOS transistor 001aaf991 75 η D η (%) ( IMD3 IMD5 −30 IMD7 −60 − 350 mA 960 MHz 960.1 MHz. 2 Intermodulation distortion as a function of peak envelope load power ...
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... P (dBm) L(AV) = 952.5 MHz; 1 Fig 5. C11 V GS C10 Test circuit for operation at 900 MHz Rev. 03 — 20 January 2010 BLF6G10S-45 Power LDMOS transistor −40 −45 (1) −50 (2) −55 − 350 mA; carrier spacing 5 MHz ( 955 MHz. ( 925 MHz. 2-carrier W-CDMA adjacent channel power ratio as function of average load power ...
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... Electrolytic capacitor Ferrite SMD bead BLF6G10S-45 SMD resistor SMD resistor Rev. 03 — 20 January 2010 BLF6G10S-45 Power LDMOS transistor − C16 C12 C13 C15 C14 BLF6G10S-45 OUTPUTBOARD TP and Figure 7). Value Remarks [1] [1] [1] [1] [1] [1] [1] [ 220 μF - Ferroxcube BDS 3/3/8 ...
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... REFERENCES JEDEC JEITA Rev. 03 — 20 January 2010 BLF6G10S-45 Power LDMOS transistor 10.24 10.24 0.51 9.98 9.98 0.403 0.403 0.020 0.393 ...
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... MHz from 800 MHz. lower frequency range extended to 700 MHz from 800 MHz. export control disclaimer added. Product data sheet Preliminary data sheet Rev. 03 — 20 January 2010 BLF6G10S-45 Power LDMOS transistor Change notice Supersedes - BLF6G10S-45_2 - BLF6G10S-45_1 - - © NXP B.V. 2010. All rights reserved ...
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... Export might require a prior authorization from national authorities. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 20 January 2010 BLF6G10S-45 Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 January 2010 Document identifier: BLF6G10S-45_3 ...