BLF6G10S-45 NXP Semiconductors, BLF6G10S-45 Datasheet - Page 4
![RF MOSFET Power LDMOS TNS](/photos/41/53/415363/sot608b_3d_sml.gif)
BLF6G10S-45
Manufacturer Part Number
BLF6G10S-45
Description
RF MOSFET Power LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10S-45112.pdf
(10 pages)
Specifications of BLF6G10S-45
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.2 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Package / Case
SOT-608-2
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
1W(Typ)
Power Gain (typ)@vds
23@28VdB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
5S
Drain Source Resistance (max)
200(Typ)@6.1Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
8%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G10S-45,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF6G10S-45
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLF6G10S-45
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
BLF6G10S-45_3
Product data sheet
Fig 1.
Fig 2.
(dB)
G
p
25
23
21
19
17
15
V
One-tone CW power gain and drain efficiency as functions of load power; typical values
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
DS
= 960.1 MHz.
= 28 V; I
= 28 V; I
20
Dq
Dq
= 350 mA; f = 960 MHz.
= 350 mA; f
40
1
= 960 MHz;
(dB)
G
p
25
23
21
19
17
15
60
P
0
L(PEP)
η
G
D
001aaf992
p
(W)
10
Rev. 03 — 20 January 2010
80
70
55
40
25
10
−5
(%)
η
D
20
Fig 3.
30
(dBc)
IMD
−30
−60
−90
0
0
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
40
2
DS
= 960.1 MHz.
001aaf991
η
G
P
D
L
= 28 V; I
p
(W)
50
20
75
60
45
30
15
0
Dq
(%)
η
D
= 350 mA; f
BLF6G10S-45
40
Power LDMOS transistor
1
= 960 MHz;
IMD3
IMD5
IMD7
60
P
© NXP B.V. 2010. All rights reserved.
L(PEP)
001aaf993
(W)
80
4 of 10