BLF368 NXP Semiconductors, BLF368 Datasheet - Page 7

• Manufacturer Part Number: BLF368
• Description: RF MOSFET Power BULK TNS-RFUH
• Manufacturer: NXP Semiconductors

Specifications of BLF368

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF368,112

Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-AB operation; V
Z
f = 225 MHz.
solid line: T
Fig.9
Class-AB operation; V
Z
f = 225 MHz.
solid line: T
Fig.11 Load power as a function of input power;
L
L
(W)
P L
(dB)
= 1.34
= 1.34
G p
500
400
300
200
100
20
16
12
8
4
0
0
0
Power gain as a function of load power;
typical values per section.
typical values per section.
h
h
j0.34
j0.34
= 25 C. dotted line: T
= 25 C. dotted line: T
100
(per section); R
(per section); R
DS
DS
10
= 32 V; I
= 32 V; I
200
DQ
DQ
h
GS
GS
h
= 70 C.
= 2
= 2
= 70 C.
300
= 536
= 536
20
250 mA;
250 mA;
(per section);
(per section);
P IN (W)
400
P L (W)
MGP239
MGP240
500
30
7
handbook, halfpage
Class-AB operation; V
Z
f = 225 MHz.
solid line: T
Fig.10 Efficiency as a function of load power;
L
(%)
= 1.34
D
80
60
40
20
0
0
typical values per section.
h
j0.34
= 25 C. dotted line: T
100
(per section); R
DS
= 32 V; I
200
DQ
h
GS
= 70 C.
= 2
300
= 536
250 mA;
Product specification
(per section);
400
P L (W)
BLF368
MGP241
500