BLF368 NXP Semiconductors, BLF368 Datasheet - Page 6

• Manufacturer Part Number: BLF368
• Description: RF MOSFET Power BULK TNS-RFUH
• Manufacturer: NXP Semiconductors

Specifications of BLF368

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF368,112

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-AB OPERATION
T
class-AB circuit. R
Note
1. Assuming a third order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized
Ruggedness in class-AB operation
The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the
following conditions: V
2003 Sep 26
handbook, halfpage
MODE OF OPERATION
CW, class-AB
h
VHF push-pull power MOS transistor
= 25 C; R
V
Fig.8
input/25% synchronized output compression in television service (negative modulation, CCIR system).
GS
(pF)
C rs
600
400
200
= 0; f = 1 MHz.
0
0
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
th mb-h
GS
10
= 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source
= 536
DS
= 32 V; f = 225 MHz at rated output power.
20
(MHz)
per section; optimum load impedance per section = 1.34
225
225
225
175
f
30
V DS (V)
V
(V)
32
28
35
28
MGP232
DS
40
2
2
2
2
(mA)
I
DQ
250
250
250
250
6
300
300
300
300
(W)
P
L
typ. 13.5
typ. 13
typ. 14
typ. 15
(dB)
G
12
p
j0.34 ; V
typ. 0.4
typ. 0.7
typ. 0.2
typ. 0.5
(dB)
G
p
1
(1)
Product specification
DS
= 32 V.
BLF368
typ. 62
typ. 68
typ. 60
typ. 70
(%)
55
D