BLF368 NXP Semiconductors, BLF368 Datasheet - Page 5

• Manufacturer Part Number: BLF368
• Description: RF MOSFET Power BULK TNS-RFUH
• Manufacturer: NXP Semiconductors

Specifications of BLF368

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF368,112

Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
(mV/K)
V
Fig.4
V
Fig.6
T.C.
DS
GS
R DSon
(m )
= 10 V.
= 10 V; I
200
150
100
0
1
2
3
4
5
10
50
1
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
0
D
= 8 A.
50
1
100
I D (A)
T j ( C)
MGP229
MGP231
10
150
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
(pF)
DS
GS
C
1500
1000
(A)
I D
500
= 10 V; T
= 0; f = 1 MHz.
60
40
20
0
0
0
0
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
j
= 25 C.
10
5
10
20
C is
C os
Product specification
15
30
V GS (V)
V DS (V)
BLF368
MGP230
MGP234
20
40