BLF368 NXP Semiconductors, BLF368 Datasheet - Page 16

• Manufacturer Part Number: BLF368
• Description: RF MOSFET Power BULK TNS-RFUH
• Manufacturer: NXP Semiconductors

Specifications of BLF368

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF368,112

Philips Semiconductors
PACKAGE OUTLINE
2003 Sep 26
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
VHF push-pull power MOS transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
SOT262A1
VERSION
OUTLINE
0.227
0.197
5.77
5.00
A
H
U 2
0.230
0.220
A
A
5.85
5.58
b
0.006
0.004
0.16
0.10
c
IEC
22.17
21.46
0.873
0.845
D
21.98
21.71
0.865
0.855
D 1
11.05
0.435
3
1
e
JEDEC
10.27
10.05
0.404
0.396
D 1
U 1
H 1
q
D
e
E
REFERENCES
10.29
10.03
0.405
0.396
E 1
0
b
2
4
0.070
0.060
1.78
1.52
F
EIAJ
scale
16
5
21.08
19.56
0.830
0.770
H
w 2
w 3
10 mm
17.02
16.51
0.670
0.650
M
M
5
H 1
C
C
M
0.129
0.119
3.28
3.02
p
F
B
p
0.112
0.102
2.85
2.59
w 1
Q
M
27.94
1.100
A
q
M
PROJECTION
EUROPEAN
B
34.17
33.90
1.345
1.335
M
U 1
E 1
0.390
0.380
9.91
9.65
U 2
c
Q
Product specification
0.010 0.020
0.25
w 1
ISSUE DATE
BLF368
99-03-29
0.51
w 2
SOT262A1
E
0.010
0.25
w 3