BLF4G10LS-120 NXP Semiconductors, BLF4G10LS-120 Datasheet - Page 8

• Manufacturer Part Number: BLF4G10LS-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10LS-120,112

Philips Semiconductors
9397 750 14547
Product data sheet
Table 8:
[1]
Component
C1, C4, C5, C6
C2
C3
C7
C8, C9
C10
R1
American Technical Ceramics type 100B or capacitor of same quality.
List of components (see
Description
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
tantalum capacitor
Philips electrolytic
capacitor
Philips chip resistor
Rev. 01 — 10 January 2006
Figure 9
[1]
[1]
[1]
Value
68 pF
5.1 pF
3.0 pF
1 F
10 F; 35 V
220 F
5.1
and
Figure
10)
BLF4G10LS-120
Dimensions
0603
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Catalogue number
1812X7R105KL2AB
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