BLF4G10LS-120 NXP Semiconductors, BLF4G10LS-120 Datasheet - Page 7

• Manufacturer Part Number: BLF4G10LS-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10LS-120,112

Fig 10. Component layout for 960 MHz test circuit
Striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) (
See
Table 8
for list of components.
C1
C2
V
GS
C9
R1
BLF4G10-120 rev.1 in
C5
PHILIPS
r
= 6.2); thickness = 0.025 inches.
BLF4G10-120 rev.1 out
PHILIPS
C6 C7 C8
V
DS
C3
C10
C4
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