BLF4G10LS-120 NXP Semiconductors, BLF4G10LS-120 Datasheet - Page 11

• Manufacturer Part Number: BLF4G10LS-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10LS-120,112

Philips Semiconductors
11. Revision history
Table 10:
9397 750 14547
Product data sheet
Document ID
BLF4G10LS-120_1
Revision history
Release date
20060110
Data sheet status
Product data sheet
Rev. 01 — 10 January 2006
Change notice
-
Doc. number
9397 750 14547
BLF4G10LS-120
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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