BLF4G10LS-120 NXP Semiconductors, BLF4G10LS-120 Datasheet - Page 5

• Manufacturer Part Number: BLF4G10LS-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10LS-120,112

Philips Semiconductors
9397 750 14547
Product data sheet
Fig 5. GSM EDGE power gain and drain efficiency as
Fig 7. GSM EDGE rms EVM and peak EVM as
EVM
(dB)
(%)
G
p
20
19
18
17
16
15
10
8
6
4
2
0
V
f = 960 MHz
functions of average load power; typical values
V
f = 960 MHz
functions of average load power; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
G
p
20
20
Dq
Dq
= 650 mA; T
= 650 mA; T
D
40
40
EVM
EVM
case
case
M
rms
= 25 C;
= 25 C;
60
60
P
P
L(AV)
L(AV)
001aac414
001aac416
(W)
(W)
Rev. 01 — 10 January 2006
80
80
50
40
30
20
10
0
(%)
D
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
ACPR
ACPR
(dBc)
(dBc)
50
60
70
80
90
56
60
64
68
72
V
f = 960 MHz
a function of average load power; typical values
V
f = 960 MHz
functions of drain efficiency; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
ACPR
10
20
400
Dq
Dq
= 650 mA; T
= 650 mA; T
BLF4G10LS-120
ACPR
ACPR
20
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
400
600
40
30
case
case
= 25 C;
= 25 C;
60
EVM
P
40
L(AV)
001aac415
001aac417
rms
D
(%)
(W)
80
50
4
3
3
2
2
1
1
0
EVM
(%)
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