BLF548 NXP Semiconductors, BLF548 Datasheet - Page 7

RF MOSFET Power BULK TNS-RFPR

BLF548

Manufacturer Part Number
BLF548
Description
RF MOSFET Power BULK TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF548

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
330 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-262-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF548,112

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Philips Semiconductors
2003 Sep 26
handbook, halfpage
UHF push-pull power MOS transistor
Class-B operation; V
f = 500 MHz; Z
Fig.9
(dB)
G p
20
16
12
8
4
0
0
Power gain and efficiency as functions of
load power; typical values.
L
= 1.1
50
DS
= 28 V; I
G p
j0.6
D
(per section).
100
DQ
= 2
160 mA;
150
P L (W)
MRA527
200
100
80
60
40
20
0
(%)
D
7
handbook, halfpage
Class-B operation; V
f = 500 MHz; Z
Fig.10 Load power as a function of input power;
(W)
P L
200
160
120
80
40
0
typical values.
0
L
= 1.1
DS
= 28 V; I
j0.6
10
(per section).
DQ
= 2
160 mA;
20
Product specification
P IN (W)
BLF548
MRA531
30

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