BLF548 NXP Semiconductors, BLF548 Datasheet - Page 4

• Manufacturer Part Number: BLF548
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF548

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF548,112

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 26
Per transistor section
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
SYMBOL
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
UHF push-pull power MOS transistor
GROUP
group indicator
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage V
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance I
on-state drain current
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
I
I
V
V
V
V
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 160 mA; V
= 4.8 A; V
= 4.8 A; V
= 0; I
= 0; V
= 20 V; V
= 15 V; V
= 0; V
= 0; V
= 0; V
D
4
CONDITIONS
DS
DS
DS
DS
= 40 mA
DS
GS
GROUP
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
DS
DS
DS
= 10 V
= 10 V
W
O
Q
P
R
S
T
U
V
X
Y
Z
= 10 V
= 10 V
= 0
65
2
2.4
16
MIN.
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
3.5
0.25
20
105
90
25
TYP.
Product specification
LIMITS
(V)
0.5
1
4
0.3
MAX.
BLF548
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
S
A
pF
pF
pF
UNIT
A