BLF548 NXP Semiconductors, BLF548 Datasheet - Page 6

• Manufacturer Part Number: BLF548
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF548

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF548,112

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in a common source, class-B, push-pull test circuit.
Ruggedness in class-B operation
The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the
following conditions: V
2003 Sep 26
handbook, halfpage
CW, class-B
h
UHF push-pull power MOS transistor
= 25 C; R
Fig.8
(pF)
C rs
100
80
60
40
20
MODE OF OPERATION
0
0
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
th mb-h
= 0.15 K/W, unless otherwise specified.
10
DS
= 28 V; f = 500 MHz at rated output power.
20
V DS (V)
(MHz)
MRA521
500
f
30
V
(V)
28
6
DS
2 x 160
(mA)
I
DQ
(W)
150
P
L
typ. 11
(dB)
G
Product specification
10
p
BLF548
typ. 55
(%)
50
D