BLF548 NXP Semiconductors, BLF548 Datasheet - Page 5

• Manufacturer Part Number: BLF548
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF548

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF548,112

Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, halfpage
UHF push-pull power MOS transistor
(mV/K)
R DSon
V
Fig.4
I
Fig.6
D
TC
DS
= 4.8 A; V
= 10 V.
0.5
0.4
0.3
0.2
0.1
10
3
2
1
0
0
1
2
3
4
0
2
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
GS
= 10 V.
40
10
1
80
T j (
1
o
C)
I D (A)
120
MRA524
MRA522
10
5
handbook, halfpage
handbook, halfpage
V
Fig.5
Fig.7
DS
(pF)
C
(A)
400
300
200
100
= 10 V; T
I D
25
20
15
10
5
0
0
0
0
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
C os
C is
j
= 25 C.
4
10
8
20
Product specification
12
V DS (V)
V GS (V)
BLF548
MRA529
MRA525
30
16