BLS6G2933S-130 NXP Semiconductors, BLS6G2933S-130 Datasheet - Page 8

• Manufacturer Part Number: BLS6G2933S-130
• Description: RF MOSFET Small Signal 130W, 2.9-3.3GHz Radar Appl.
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2933S-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063208112

NXP Semiconductors
9. Package outline
Fig 11. Package outline SOT922-1
BLS6G2933S-130_3
Product data sheet
Ceramic earless flanged cavity package; 2 leads
DIMENSIONS (mm are the original dimensions)
inches
UNIT
mm
SOT922-1
VERSION
OUTLINE
0.166
0.139
4.22
3.53
A
12.42
12.17
0.489
0.479
b
H
0.006
0.004
0.15
0.10
U
c
2
IEC
L
A
17.58
17.22
0.692
0.678
D
17.50
17.25
0.689
0.679
D
1
JEDEC
0.375
0.365
9.53
9.27
All information provided in this document is subject to legal disclaimers.
E
U
REFERENCES
D
D
b
1
0.365
0.355
1
1
2
9.27
9.02
E
1
Rev. 03 — 3 March 2010
0
0.052
0.032
1.32
0.81
F
JEITA
3
scale
15.62
14.34
0.615
0.525
5
H
w2
F
M
3.05
2.03
0.12
0.08
D
10 mm
L
D
M
0.067
0.057
1.70
1.45
Q
17.75
17.50
0.699
0.689
LDMOS S-band radar power transistor
U
1
BLS6G2933S-130
0.375
0.365
9.53
9.27
E
U
1
2
PROJECTION
EUROPEAN
0.010
Q
0.25
w
2
c
E
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
05-11-14
05-11-22
SOT922-1
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