BLS6G2933S-130 NXP Semiconductors, BLS6G2933S-130 Datasheet - Page 5

• Manufacturer Part Number: BLS6G2933S-130
• Description: RF MOSFET Small Signal 130W, 2.9-3.3GHz Radar Appl.
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2933S-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063208112

NXP Semiconductors
BLS6G2933S-130_3
Product data sheet
Fig 2.
Fig 4.
(dB)
(%)
G
η
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
D
p
14
10
60
40
20
6
2
0
0
V
Power gain as a function of load power; typical
values
0
V
typical values
Drain efficiency as a function of load power;
DS
DS
= 32 V; I
= 32 V; I
7.2 Graphs
Dq
Dq
60
60
= 100 mA; t
= 100 mA; t
(2)
(3)
(1)
p
p
120
= 300 μs; δ = 10 %.
120
= 300 μs; δ = 10 %.
P
P
All information provided in this document is subject to legal disclaimers.
L
L
001aaj266
001aaj268
(W)
(W)
(1)
(3)
(2)
180
180
Rev. 03 — 3 March 2010
Fig 3.
Fig 5.
(dB)
(%)
G
η
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
D
p
14
10
60
40
20
6
2
0
0
0
V
Power gain as a function of load power; typical
values
V
Drain efficiency as a function of load power;
typical values
DS
DS
= 32 V; I
= 32 V; I
LDMOS S-band radar power transistor
BLS6G2933S-130
Dq
Dq
60
60
= 100 mA; t
= 100 mA; t
(2)
(3)
(1)
p
p
= 100 μs; δ = 20 %.
= 100 μs; δ = 20 %.
120
120
© NXP B.V. 2010. All rights reserved.
P
P
L
L
001aaj267
001aaj269
(W)
(W)
(1)
(3)
(2)
180
180
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