BLS6G2933S-130 NXP Semiconductors, BLS6G2933S-130 Datasheet - Page 11

• Manufacturer Part Number: BLS6G2933S-130
• Description: RF MOSFET Small Signal 130W, 2.9-3.3GHz Radar Appl.
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2933S-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063208112

NXP Semiconductors
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
13. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BLS6G2933S-130_3
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 March 2010
[e-mail]
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
LDMOS S-band radar power transistor
BLS6G2933S-130
© NXP B.V. 2010. All rights reserved.
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