BLS6G2933S-130 NXP Semiconductors, BLS6G2933S-130 Datasheet - Page 2

• Manufacturer Part Number: BLS6G2933S-130
• Description: RF MOSFET Small Signal 130W, 2.9-3.3GHz Radar Appl.
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2933S-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063208112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLS6G2933S-130_3
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLS6G2933S-130 -
Symbol
V
V
I
T
T
Symbol
Z
D
stg
j
th(j-mb)
DS
GS
S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
range
Connected to flange.
Parameter
transient thermal impedance from junction
to mounting base
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
Rev. 03 — 3 March 2010
Description
ceramic earless flanged cavity package; 2 leads
[1]
LDMOS S-band radar power transistor
Simplified outline
Conditions
T
case
BLS6G2933S-130
t
t
t
t
p
p
p
p
= 85 °C; P
= 100 μs; δ = 10 %
= 200 μs; δ = 10 %
= 300 μs; δ = 10 %
= 100 μs; δ = 20 %
1
2
3
L
Min
-
−0.5
-
−65
-
= 130 W
Graphic symbol
© NXP B.V. 2010. All rights reserved.
+13
225
Max
60
33
+150
2
sym112
Typ
0.23 K/W
0.28 K/W
0.32 K/W
0.33 K/W
Version
SOT922-1
1
3
Unit
V
V
A
°C
°C
2 of 12
Unit