BF1208 T/R NXP Semiconductors, BF1208 T/R Datasheet - Page 7

• Manufacturer Part Number: BF1208 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1208 T/R

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SS-Mini-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1208,115

Philips Semiconductors
9397 750 14254
Product data sheet
Fig 6. Amplifier A: forward transfer admittance as a
(mS)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
y
fs
40
30
20
10
0
V
function of drain current; typical values
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 5 V; V
8
(6)
G1-S(B)
= V
16
(5)
DS(B)
= 0 V; T
(4)
24
I
j
001aaa556
D
(1)
= 25 C.
(mA)
(2)
(3)
32
Rev. 01 — 16 March 2005
Fig 7. Amplifier A: drain current as a function of
I
(mA)
D(A)
20
16
12
8
4
0
V
V
I
MOSFET (B) is switched off.
internal G1 current; typical values
D(B)
0
DS(A)
G1-S(B)
= internal G1 current = current in pin drain (B) if
= 5 V; V
= 0 V; T
Dual N-channel dual gate MOSFET
G2-S
20
j
= 25 C.
= 4 V; V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
DS(B)
40
= 5 V;
I
D(B)
001aac206
BF1208
( A)
60
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