BF1208,115 NXP Semiconductors, BF1208,115 Datasheet
BF1208,115
Specifications of BF1208,115
BF1208 T/R
BF1208 T/R
Related parts for BF1208,115
BF1208,115 Summary of contents
Page 1
BF1208 Dual N-channel dual gate MOSFET Rev. 01 — 16 March 2005 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The ...
Page 2
Philips Semiconductors 1.4 Quick reference data Table 1: Per MOSFET unless otherwise specified. Symbol Parameter tot iss(G1) C rss NF Xmod Pinning information Table 2: Pin ...
Page 3
Philips Semiconductors 3. Ordering information Table 3: Type number BF1208 4. Marking Table 4: Type number BF1208 5. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per MOSFET ...
Page 4
Philips Semiconductors 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 7. Static characteristics Table 7: Static characteristics unless otherwise specified. j Symbol Parameter Per MOSFET; unless ...
Page 5
Philips Semiconductors (mA (4) 4 ( 120 k . D( 150 k . D( ...
Page 6
Philips Semiconductors Table 8: Dynamic characteristics for amplifier A Common source amb G2-S Symbol Parameter Xmod cross-modulation [1] For the MOSFET not in use: V G1-S(B) [2] Measured in Figure 33 test circuit. 8.1.1 Graphics ...
Page 7
Philips Semiconductors (mS ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S (5) ...
Page 8
Philips Semiconductors (mA DS(A) DS(B) supply G2 150 k (connected to ground); see G1 Fig 8. Amplifier A: drain current ...
Page 9
Philips Semiconductors (mA DS(A) DS(B) G1-S( see Figure 33. amb Fig 12. Amplifier A: drain current as a function of ...
Page 10
Philips Semiconductors Fig 16. Amplifier A: output admittance as a function of frequency; typical values 8.1.2 Scattering parameters for amplifier A Table DS(A) f (MHz) 50 100 200 300 400 500 600 700 800 ...
Page 11
Philips Semiconductors 8.2 Dynamic characteristics for amplifier B Table 11: Dynamic characteristics for amplifier B Common source amb Symbol Parameter y forward transfer admittance fs C input capacitance at gate1 iss(G1) C input capacitance at ...
Page 12
Philips Semiconductors 8.2.1 Graphics for amplifi (mA 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. ...
Page 13
Philips Semiconductors 100 0.4 0.8 ( G2-S ( 3.5 V. G2-S ( G2-S ( 2.5 V. G2-S (5) ...
Page 14
Philips Semiconductors ( 100 ( 120 (5) ...
Page 15
Philips Semiconductors ( 3.0 ...
Page 16
Philips Semiconductors (mS DS(B) G2 D(B) Fig 29. Amplifier ...
Page 17
Philips Semiconductors 8.2.2 Scattering parameters for amplifier B Table 12 DS(B) f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 8.2.3 Noise data for amplifier B Table 13 ...
Page 18
Philips Semiconductors 9. Test information Fig 33. Cross-modulation test set-up for amplifier A Fig 34. Cross-modulation test set-up for amplifier B 9397 750 14254 Product data sheet V AGC 10 k 4.7 nF G1A R GEN 4 ...
Page 19
Philips Semiconductors 10. Package outline Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 ...
Page 20
Philips Semiconductors 11. Revision history Table 14: Revision history Document ID Release date BF1208_1 20050316 9397 750 14254 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 16 March 2005 BF1208 Dual N-channel dual ...
Page 21
Philips Semiconductors 12. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...
Page 22
Philips Semiconductors 16. Contents 1 Product profi 1.1 General description ...