BF1208 T/R NXP Semiconductors, BF1208 T/R Datasheet - Page 11

• Manufacturer Part Number: BF1208 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1208 T/R

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SS-Mini-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1208,115

Philips Semiconductors
Table 11:
Common source; T
[1]
[2]
9397 750 14254
Product data sheet
Symbol Parameter
C
C
C
C
G
NF
Xmod
y
fs
iss(G1)
iss(G2)
oss
rss
tr
For the MOSFET not in use: V
Measured in
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance f = 1 MHz
power gain
noise figure
cross-modulation
Dynamic characteristics for amplifier B
Figure 34
8.2 Dynamic characteristics for amplifier B
amb
= 25 C; V
test circuit.
G1-S(A)
G2-S
= 0 V; V
= 4 V; V
Conditions
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
input level for k = 1 %; f
j
S
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
= 25 C
= B
DS(A)
DS
S(opt)
= 5 V; I
= 0 V.
Rev. 01 — 16 March 2005
; B
[1]
L
S
S
S
D
= B
= 20 mS; B
= Y
= Y
= 13 mA; unless otherwise specified.
S
S
S
L(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
w
= 50 MHz; f
S
= 0 S
L
L
= 0.5 mS
= 1 mS
L
= 1 mS
unw
= 60 MHz
Dual N-channel dual gate MOSFET
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[2]
Min Typ
28
-
-
-
-
33
30
29
-
-
-
90
-
-
100
33
2.0
3.4
0.85
20
37
34
33
5
1.3
1.4
-
88
94
103
BF1208
Max Unit
43
2.5
-
-
-
41
38
37
-
1.9
2.1
-
-
-
-
11 of 22
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dB V
dB V
dB V
dB V