BLS3135-65 TRAY NXP Semiconductors, BLS3135-65 TRAY Datasheet - Page 5

• Manufacturer Part Number: BLS3135-65 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-65 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 200000 mW
• Package / Case: SOT-422
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS3135-65,114

Philips Semiconductors
1999 Aug 16
handbook, halfpage
handbook, halfpage
Microwave power transistor
V
Fig.5
V
Fig.7
CB
CB
(dB)
( )
G p
Z i
= 40 V; class-C; t
= 40 V; class-C; P
10
25
20
15
10
8
6
4
2
0
5
0
3.1
3.1
Power gain as a function of frequency;
typical values.
Input impedance as a function of frequency
(series components); typical values.
3.2
3.2
p
L
= 100 s;
= 65 W.
x i
r i
3.3
3.3
= 10%.
3.4
3.4
f (GHz)
f (GHz)
MCD753
MCD755
3.5
3.5
5
handbook, halfpage
handbook, halfpage
Losses
V
Fig.6
V
Fig.8
Return
CB
CB
(dB)
( )
Z L
= 40 V; class-C; t
= 40 V; class-C; P
20
10
30
0
8
4
0
4
8
3.1
3.1
Return losses input as a function of
frequency; typical values.
Load impedance as a function of frequency
(series components); typical values.
3.2
3.2
p
L
= 100 s;
= 65 W.
R L
X L
3.3
3.3
= 10%.
BLS3135-65
Product specification
3.4
3.4
f (GHz)
f (MHz)
MCD754
MCD756
3.5
3.5