BLS3135-65 TRAY NXP Semiconductors, BLS3135-65 TRAY Datasheet - Page 10

• Manufacturer Part Number: BLS3135-65 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-65 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 200000 mW
• Package / Case: SOT-422
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS3135-65,114

Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-65
NOTES
1999 Aug 16
10