BF244C_Q Fairchild Semiconductor, BF244C_Q Datasheet
BF244C_Q
Specifications of BF244C_Q
Related parts for BF244C_Q
BF244C_Q Summary of contents
Page 1
... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted BF244A / BF244B / BF244C Value Units ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Gate-Source Breakdown Voltage (BR)GSS I Gate Reverse Current GSS V Gate-Source Cutoff Voltage GSS(off) V Gate-Source Voltage GS ON CHARACTERISTICS I Zero-Gate Voltage Drain Current DSS SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance y ...
Page 3
Typical Characteristics Transconductance Characteristics - + +125 -2 GATE-SOURCE ...
Page 4
Typical Characteristics Capacitance vs Voltage 0.1 - 1.0 MHz - GATE-SOURCE VOLTAGE( Common ...
Page 5
Common Source Characteristics Output Admittance 10) OSS g OSS V = 15V (CS) 100 200 300 500 f -- FREQUENCY (MHz) Forward Transadmittance fss -b fss ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...