BLF6G27L-50BN,118 NXP Semiconductors, BLF6G27L-50BN,118 Datasheet - Page 7

• Manufacturer Part Number: BLF6G27L-50BN,118
• Description: RF MOSFET Power Single 65V 0.25Ohms
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27L-50BN,118

• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1112A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Fig 9.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
17.0
16.5
16.0
15.5
15.0
14.5
p
0
V
2-carrier W-CDMA power gain as a function of
load power; typical values
DS
= 28 V; I
7.4 2-carrier W-CDMA
5
Dq
(1)
(2)
(3)
= 430 mA.
All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1;
64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz;
f
1
10
= 2500 MHz; f
15
20
All information provided in this document is subject to legal disclaimers.
2
001aan489
P
= 2600 MHz; f
L
(W)
25
Rev. 2 — 7 April 2011
3
= 2700 MHz; T
Fig 10. 2-carrier W-CDMA drain efficiency as a
(%)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
50
40
30
20
10
0
0
V
function of load power; typical values
DS
= 28 V; I
BLF6G27L(S)-50BN
case
5
= 25 °C; unless otherwise specified.
Dq
= 430 mA.
10
Power LDMOS transistor
15
© NXP B.V. 2011. All rights reserved.
20
001aan490
(1)
(2)
(3)
P
L
(W)
25
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