BLF6G27L-50BN,118 NXP Semiconductors, BLF6G27L-50BN,118 Datasheet - Page 11

• Manufacturer Part Number: BLF6G27L-50BN,118
• Description: RF MOSFET Power Single 65V 0.25Ohms
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27L-50BN,118

• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1112A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Fig 16. Package outline SOT1112B
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Earless flanged ceramic package; 6 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1112B
Outline
version
(1)
max
nom
max
nom
min
min
0.183
0.148
4.65
3.76
A
H
0.045
0.035
1.14
0.89
b
Z
0.207
0.197
5.26
5.00
IEC
b
A
1
0.007
0.004
0.18
0.10
c
4
6
b
L
9.65
9.40
0.38
0.37
D
JEDEC
9.65
9.40
0.38
0.37
All information provided in this document is subject to legal disclaimers.
D
1
D
U
b
9.65
9.40
0.38
0.37
References
D
3
1
2
1
1
1
E
0
Rev. 2 — 7 April 2011
9.65
9.40
0.38
0.37
E
1
JEITA
0.045
0.035
1.14
0.89
w
F
2
scale
D
5
5
7
17.12
16.10
0.674
0.634
D
H
Z
F
0.118
0.106
1
3.00
2.69
L
10 mm
0.067
0.057
1.70
1.45
Q
(2)
BLF6G27L(S)-50BN
9.91
9.65
0.39
0.38
U
1
9.91
9.65
0.39
0.38
U
2
U
2
0.51
0.02
European
projection
w
2
E
1
Power LDMOS transistor
0.235
0.225
5.97
5.72
Z
Q
11.20
10.95
0.441
0.431
Z
1
© NXP B.V. 2011. All rights reserved.
c
64
62
64
62
Issue date
09-10-12
10-02-02
E
sot1112b_po
SOT1112B
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