BLF6G27L-50BN,118 NXP Semiconductors, BLF6G27L-50BN,118 Datasheet - Page 13

• Manufacturer Part Number: BLF6G27L-50BN,118
• Description: RF MOSFET Power Single 65V 0.25Ohms
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27L-50BN,118

• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1112A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
11. Revision history
Table 10.
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Document ID
BLF6G27L-50BN_6G27LS-50BN v.2
Modifications:
BLF6G27L-50BN_6G27LS-50BN v.1
Revision history
All information provided in this document is subject to legal disclaimers.
Release date
20110407
20100916
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Section 1.1 on page
Table 1 on page
The ESD warning has been moved to
Section 1.2 on page
Section 1.3 on page
sentence.
Table 4 on page
Table 5 on page
Table 6 on page
Table 7 on page
Table 8 on page
Section 7.1 on page
Section 7.2 on page
Section 7.3 on page
Section 7.4 on page
Section 7.5 on page
Section 9 on page
Rev. 2 — 7 April 2011
Data sheet status
Product data sheet
Objective data sheet
1: several changes have been made.
2: the limiting values for I
3: The value for R
3: several changes have been made.
3: several changes have been made.
4: several changes have been made.
12: section has been added.
1: 45 W has been changed to 50 W.
1: the value of efficiency has been changed.
1: the term W-CDMA has been removed from the
4: several changes have been made.
4: section has been added.
5: section has been added.
7: section has been added.
9: section has been added.
BLF6G27L(S)-50BN
th(j-case)
Change notice
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Section 9 on page
D
has been changed.
have been added.
Power LDMOS transistor
Supersedes
BLF6G27L-50BN_
6G27LS-50BN v.1
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© NXP B.V. 2011. All rights reserved.
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