BLF6G27L-50BN,118 NXP Semiconductors, BLF6G27L-50BN,118 Datasheet - Page 3

• Manufacturer Part Number: BLF6G27L-50BN,118
• Description: RF MOSFET Power Single 65V 0.25Ohms
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27L-50BN,118

• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1112A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Table 5.
Table 6.
T
Table 7.
All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1; 64 DPCH;
PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz; f
f
otherwise specified.
Symbol Parameter
R
Symbol Parameter
V
V
I
I
I
I
g
R
Symbol
P
G
η
ACPR
I
2
Dq
DSS
DSX
GSS
Dq
j
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-case)
DS(on)
= 2600 MHz; f
p
= 25
°
C per section; unless otherwise specified
drain-source breakdown
voltage
gate-source threshold voltage
quiescent drain current
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
thermal resistance from junction to case T
Parameter
average output power
power gain
drain efficiency
adjacent channel power ratio
quiescent drain current
Thermal characteristics
Characteristics
2-carrier W-CDMA application information
3
All information provided in this document is subject to legal disclaimers.
= 2700 MHz; RF performance at V
Rev. 2 — 7 April 2011
Conditions
V
V
sense transistor:
main transistor:
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
V
V
= 2.52 A
I
DS
DS
DS
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
= 9.1 mA;
= 26.5 V
= 28 V
Conditions
P
P
P
V
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
DD
DS
Conditions
BLF6G27L(S)-50BN
case
= 28 V
D
= 28 V; I
DS
D
D
= 3 W
= 3 W
= 3 W
= 0.5 mA
+ 3.75 V;
DS
+ 3.75 V;
= 72 mA
= 3.6 A
= 80 °C; P
= 28 V
= 0 V
Dq
= 430 mA; T
L
Power LDMOS transistor
= 12.5 W (CW)
Min
-
15.3
12.5
-
-
Min
65
1.4
380
-
10
-
-
-
Typ
3
16.5
14.5
−47
430
Typ
-
1.9
430
-
12
-
5.0
0.25
© NXP B.V. 2011. All rights reserved.
case
1
= 2500 MHz;
= 25
Max
-
-
-
−43
-
Max
-
2.4
480
1.5
-
150
-
-
Typ Unit
1.3
°
C; unless
3 of 16
Unit
W
dB
%
dBc
mA
K/W
Unit
V
V
mA
μA
A
nA
S
Ω