BLF6G27L-50BN,118 NXP Semiconductors, BLF6G27L-50BN,118 Datasheet - Page 12

• Manufacturer Part Number: BLF6G27L-50BN,118
• Description: RF MOSFET Power Single 65V 0.25Ohms
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27L-50BN,118

• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1112A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
9. Handling information
10. Abbreviations
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
CAUTION
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
PAR
RF
VSWR
W-CDMA
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 2 — 7 April 2011
BLF6G27L(S)-50BN
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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