DG612AEQ-T1-E3 Vishay, DG612AEQ-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: DG612AEQ-T1-E3
• Description: 1 PC Charge Injection,Quad SPST Switches
• Manufacturer: Vishay

Specifications of DG612AEQ-T1-E3

• Function: Switch
• Circuit: 4 x SPST - NO
• On-state Resistance: 72 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 2.7 V ~ 12 V, ± 2.7 V ~ 5 V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Number Of Switches: Quad
• Switch Configuration: SPST
• On Resistance (max): 235 Ohm @ 3 V
• On Time (max): 125 ns @ 3 V
• Off Time (max): 55 ns @ 3 V
• Off Isolation (typ): - 62 dB
• Bandwidth: 720 MHz
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Maximum Power Dissipation: 450 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.000001 mA @ 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG612AEQ-T1-E3TR

Document Number: 69904
S11-0154-Rev. B, 31-Jan-11
SPECIFICATIONS FOR UNIPOLAR SUPPLIES (V+ = + 5 V, V- = 0 V)
Parameter
Analog Switch
Analog Signal Range
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
Switch On
Leakage Current
Digital Control
Input Current, V
Input Current, V
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
Channel-to-Channel
Crosstalk
3 dB Bandwidth
Source Off Capacitance
Drain Off Capacitance
Drain On Capacitance
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
e
e
e
e
e
IN
IN
e
e
Low
High
e
e
e
e
e
R
V
Symbol
FLATNESS
ANALOG
C
C
C
R
OIRR
X
I
I
I
t
I
R
t
S(off)
D(off)
D(on)
BW
C
t
BBM
GND
OFF
TALK
S(off)
D(off)
D(on)
I
I
ON
Q
I+
I-
ON
IH
IL
IN
ON
V
I
S
g
f = 1 MHz; V
I
I
R
R
= 1 mA, V
DG613A only, V
V
V
= 0 V, R
S
S
V
R
R
V+ = + 5 V, V- = 0 V,
V+ = + 5 V, V- = 0 V,
L
L
V+ = + 5 V, V- = 0 V
V
V+ = 5.5 V, V- = 0 V
V+ = 5.5 V, V- = 0 V
IN
IN
f = 1 MHz; V
V+ = + 5 V, V- = 0 V
Unless Specified
= 1 mA, V
= 1 mA, V
S
V
L
L
Test Conditions
D
= 300 , C
= 300 , C
IN
V
V
Under Test = 0.8 V
Under Test = 2.0 V
= 3 V, see figure 1
= 50 , C
= 50 , C
V
= V
D
S
f = 10 MHz
IN
= 2.0 V, 0.8 V
f = 1 MHz
= 1 V/4.5 V
= 4.5 V/1 V
g
S
= 0 or 5 V
= 0 , C
D
= 1 V/4.5 V
S
= 0 V, + 3.5 V
D
D
New Product
= V
L
L
L
L
= + 3.5 V
= + 3.5 V
S
= 35 pF
= 35 pF
= 5 pF
= 5 pF
S
= 0 V
D
= 3 V
L
= 0 V
a
= 1 nF
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
DG611A, DG612A, DG613A
b
- 0.001
- 0.001
± 0.02
± 0.02
± 0.02
Typ.
0.005
0.005
0.001
139
- 61
- 90
675
2.3
56
33
16
19
1
2
3
5
9
c
- 40 °C to 125 °C - 40 °C to 85 °C
Min.
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 2
- 2
- 6
- 1
- 1
0
2
d
Max.
180
235
120
100
0.1
0.1
0.1
0.1
0.1
10
80
60
35
50
0.1
5
6
2
2
6
1
d
Vishay Siliconix
- 0.25
- 0.25
- 0.25
Min.
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 1
- 1
0
2
d
www.vishay.com
Max.
0.25
0.25
0.25
180
215
110
0.1
0.1
0.1
0.1
0.1
80
60
90
35
45
0.1
5
6
9
1
d
MHz
Unit
µA
pC
µA
nA
pF
dB
pF
ns

V
5