DG612AEQ-T1-E3 Vishay, DG612AEQ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: DG612AEQ-T1-E3
• Description: 1 PC Charge Injection,Quad SPST Switches
• Manufacturer: Vishay

Specifications of DG612AEQ-T1-E3

• Function: Switch
• Circuit: 4 x SPST - NO
• On-state Resistance: 72 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 2.7 V ~ 12 V, ± 2.7 V ~ 5 V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Number Of Switches: Quad
• Switch Configuration: SPST
• On Resistance (max): 235 Ohm @ 3 V
• On Time (max): 125 ns @ 3 V
• Off Time (max): 55 ns @ 3 V
• Off Isolation (typ): - 62 dB
• Bandwidth: 720 MHz
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Maximum Power Dissipation: 450 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.000001 mA @ 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG612AEQ-T1-E3TR

DG611A, DG612A, DG613A
Vishay Siliconix
www.vishay.com
4
SPECIFICATIONS FOR DUAL SUPPLIES (V+ = + 5 V, V- = - 5 V)
Parameter
Analog Switch
Analog Signal Range
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
Switch On
Leakage Current
Digital Control
Input Current, V
Input Current, V
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
Channel-to-Channel
Crosstalk
3 dB Bandwidth
Source Off Capacitance
Drain Off Capacitance
Drain On Capacitance
Total Harmonic
Distortion
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
e
e
e
e
IN
IN
e
Low
High
e
e
e
e
e
R
V
Symbol
FLATNESS
ANALOG
C
C
C
X
R
OIRR
I
I
I
t
THD
I
R
t
S(off)
D(off)
D(on)
BW
C
t
BBM
GND
OFF
D(off)
D(on)
TALK
S(off)
I
I
ON
I+
Q
IH
I-
ON
IL
IN
ON
Signal = 1 V
I
I
S
S
V
= 1 mA, V
= 1 mA, V
g
f = 1 MHz; V
R
V
R
DG613A only, V
V+ = 5.5 V, V- = - 5.5 V
V+ = 5.5 V, V- = - 5.5 V
V
V
= 0 V, R
I
V+ = + 5 V, V- = - 5 V
V+ = + 5 V, V- = - 5 V
R
R
S
V
S
L
L
V
IN
IN
f = 1 MHz; V
Unless Specified
V
V
D
L
L
Test Conditions
= 1 mA, V
S
= 300 , C
= ± 3 V, see figure 1
= 300 , C
IN
D
Under Test = 0.8 V
Under Test = 2.0 V
= 50 , C
= 50 , C
= + 4.5 V/- 4.5 V
V
= - 4.5 V/+ 4.5 V
= V
f = 10 MHz
R
IN
= 2.0 V, 0.8 V
f = 1 MHz
RMS
L
g
D
D
= 0 or 5 V
= 600 
S
= 0 , C
= - 3 V, 0 V, + 3 V
= - 3 V, 0 V, + 3 V
, 20 Hz to 20 kHz,
= ± 4.5 V
S
D
New Product
= V
L
L
L
L
S
= ± 3 V
= 35 pF
= 35 pF
= 5 pF
= 5 pF
S
= 0 V
D
= 3 V
L
= 0 V
a
= 1 nF
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
- 0.001
- 0.001
± 0.02
± 0.02
± 0.02
0.005
0.005
0.001
Typ.
0.01
- 62
- 90
720
0.7
72
25
27
16
15
2
1
2
3
9
c
- 40 °C to 125 °C - 40 °C to 85 °C
Min.
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 5
- 2
- 2
- 6
- 1
- 1
2
d
Max.
115
160
6.5
0.1
0.1
0.1
0.1
0.1
0.1
40
60
55
90
35
50
5
4
2
2
6
1
d
S11-0154-Rev. B, 31-Jan-11
Document Number: 69904
Min.
- 0.25
- 0.25
- 0.25
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 5
- 1
- 1
2
d
Max.
0.25
0.25
0.25
115
140
5.5
0.1
0.1
0.1
0.1
0.1
0.1
40
55
55
75
35
45
5
4
1
d
Unit
MHz
nA
µA
pF
pC
dB
pF
µA
ns

%
V