DG612AEQ-T1-E3 Vishay, DG612AEQ-T1-E3 Datasheet - Page 10

1 PC Charge Injection,Quad SPST Switches

DG612AEQ-T1-E3

Manufacturer Part Number
DG612AEQ-T1-E3
Description
1 PC Charge Injection,Quad SPST Switches
Manufacturer
Vishay
Datasheet

Specifications of DG612AEQ-T1-E3

Function
Switch
Circuit
4 x SPST - NO
On-state Resistance
72 Ohm
Voltage Supply Source
Single, Dual Supply
Voltage - Supply, Single/dual (±)
2.7 V ~ 12 V, ± 2.7 V ~ 5 V
Current - Supply
1µA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-TSSOP
Number Of Switches
Quad
Switch Configuration
SPST
On Resistance (max)
235 Ohm @ 3 V
On Time (max)
125 ns @ 3 V
Off Time (max)
55 ns @ 3 V
Off Isolation (typ)
- 62 dB
Bandwidth
720 MHz
Supply Voltage (max)
12 V
Supply Voltage (min)
2.7 V
Maximum Power Dissipation
450 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Switch Current (typ)
0.000001 mA @ 5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG612AEQ-T1-E3TR
DG611A, DG612A, DG613A
Vishay Siliconix
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69904.
www.vishay.com
10
V
S
R
g
= 50
0 V, 2.4 V
S
IN
Figure 5. Off-Isolation
GND
Off Isolation = 20 log
C = RF Bypass
C = RF bypass
X
TALK
+ 5 V
- 5 V
V-
V+
Isolation = 20 log
V
D
S
C
R
V
V
g
O
S
C
= 50
0 V, 2.4 V
0 V, 2.4 V
R
50
New Product
V
V
V
L
O
S
O
NC
Figure 4. Crosstalk
S
IN
S
IN
1
2
1
2
GND
0 V, 2.4 V
- 5 V
V -
+ 5 V
IN
Figure 6. Source/Drain Capacitances
V+
D
D
GND
1
2
C
C
+ 5 V
- 5 V
V -
V+
50
R
L
S
D
V
O
S11-0154-Rev. B, 31-Jan-11
Document Number: 69904
C
C
or Equivalent
Impedance
HP4192A
Analyzer
Meter

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