CY8C3665AXI-010 Cypress Semiconductor Corp, CY8C3665AXI-010 Datasheet - Page 101

• Manufacturer Part Number: CY8C3665AXI-010
• Description: PSOC3
• Manufacturer: Cypress Semiconductor Corp
• Series: PSOC™ 3 CY8C36xxr

Specifications of CY8C3665AXI-010

• Package / Case: *
• Voltage - Supply (vcc/vdd): 1.71 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Speed: 67MHz
• Number Of I /o: 62
• Eeprom Size: 1K x 8
• Core Processor: 8051
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Program Memory Size: 32KB (32K x 8)
• Data Converters: A/D 2x12b, D/A 4x8b
• Oscillator Type: Internal
• Peripherals: CapSense, DMA, POR, PWM, WDT
• Connectivity: EBI/EMI, I²C, LIN, SPI, UART/USART
• Core Size: 8-Bit
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Technology: CMOS
• Processing Unit: Microcontroller
• Operating Supply Voltage (min): 1.8V
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (max): 5.5V
• Package Type: TQFP
• Screening Level: Industrial
• Pin Count: 100
• Mounting: Surface Mount
• Rad Hardened: No
• Processor Series: CY8C36
• Core: 8051
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SPI, UART, USB
• Maximum Clock Frequency: 67 MHz
• Number Of Programmable I/os: 28 to 72
• Number Of Timers: 4
• Operating Supply Voltage: 0.5 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Controller Family/series: (8051) PSOC 3
• No. Of I/o's: 62
• Eeprom Memory Size: 1KB
• Ram Memory Size: 4KB
• Cpu Speed: 67MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11.7 Memory
Specifications are valid for –40 °C ≤ T
except where noted.
11.7.1 Flash
Table 11-54. Flash DC Specifications
Table 11-55. Flash AC Specifications
11.7.2 EEPROM
Table 11-56. EEPROM DC Specifications
Table 11-57. EEPROM AC Specifications
Document Number: 001-53413 Rev. *L
T
T
T
T
Parameter
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
WRITE
Erase and program voltage
Single row erase/write cycle time
EEPROM data retention time, retention
period measured from last erase cycle
Erase and program voltage
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device program time, including
JTAG or SWD, and other overhead
Flash data retention time, retention
period measured from last erase cycle
Description
Description
Description
Description
A
≤ 85 °C and T
J
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp.
T
cycles
V
Average ambient temp.
T
cycles
Average ambient temp.
T
cycles
A
≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
A
A
DDD
≤ 85 °C, 10 K erase/program
≤ 55 °C, 100 K erase/program
≤ 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
Conditions
A
A
≤ 25 °C,
≤ 55 °C,
PSoC
1.71
Min
Min
1.71
Min
Min
20
10
20
20
10
–
–
–
–
–
–
–
®
3: CY8C36 Family
Typ
Typ
Typ
Typ
15
10
–
5
–
–
–
–
–
–
2
–
–
–
Max
Max
Data Sheet
Max
Max
5.5
20
13
35
15
5.5
20
7
5
–
–
–
–
–
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