CY7C1480V33-167AXC Cypress Semiconductor Corp, CY7C1480V33-167AXC Datasheet - Page 15

• Manufacturer Part Number: CY7C1480V33-167AXC
• Description: CY7C1480V33-167AXC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480V33-167AXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Density: 72Mb
• Access Time (max): 3.4ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 167MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 21b
• Package Type: TQFP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 4
• Supply Current: 450mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 2M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-2169; CY7C1480V33-167AXC

Document Number: 38-05283 Rev. *J
3.3V TAP AC Test Conditions
Input pulse levels ............................................... .V
Input rise and fall times ................................................... 1 ns
Input timing reference levels ...........................................1.5V
Output reference levels...................................................1.5V
Test load termination supply voltage...............................1.5V
3.3V TAP AC Output Load Equivalent
TAP DC Electrical Characteristics And Operating Conditions
(0°C < T
Identification Register Definitions
Notes
V
V
V
V
V
V
I
Revision Number (31:29)
Device Depth (28:24)
Architecture/Memory Type(23:18)
Bus Width/Density(17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
11. All voltages referenced to V
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDO
A
Instruction Field
< +70°C; VDD = 3.135 to 3.6V unless otherwise noted)
Output HIGH Voltage I
Output HIGH Voltage I
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Z = 50Ω
O
SS
Description
(GND).
CY7C1480V33
00000110100
(2M x36)
000000
100100
01011
1.5V
000
1
I
I
I
I
GND < V
OH
OH
OH
OL
OL
OL
20pF
= 8.0 mA
= 1.0 mA
= 100 µA
50Ω
= –4.0 mA, V
= –1.0 mA, V
= –100 µA
SS
CY7C1482V33
IN
00000110100
to 3.3V
(4M x 18)
< V
000000
010100
01011
000
Test Conditions
DDQ
1
DDQ
DDQ
[11]
= 3.3V
= 2.5V
2.5V TAP AC Test Conditions
Input pulse levels................................................. V
Input rise and fall time .....................................................1 ns
Input timing reference levels......................................... 1.25V
Output reference levels ................................................ 1.25V
Test load termination supply voltage ............................ 1.25V
2.5V TAP AC Output Load Equivalent
CY7C1486V33
V
V
V
V
V
V
V
V
V
V
00000110100 Enables unique identification of SRAM
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
(1M x72)
000000
110100
01011
000
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
TDO
1
Describes the version number
Reserved for internal use
Defines memory type and architecture
Defines width and density
vendor
Indicates the presence of an ID register
Z = 50Ω
O
Min.
–0.3
–0.3
2.4
2.0
2.9
2.1
2.0
1.7
–5
Description
CY7C1480V33
CY7C1482V33
CY7C1486V33
V
V
1.25V
DD
DD
Max.
0.4
0.4
0.2
0.2
0.8
0.7
5
+ 0.3
+ 0.3
20pF
50Ω
Page 15 of 31
SS
to 2.5V
Unit
µA
V
V
V
V
V
V
V
V
V
V
V
V
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