SKB02N120 Infineon Technologies, SKB02N120 Datasheet - Page 5

• Manufacturer Part Number: SKB02N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 2A
• Manufacturer: Infineon Technologies

Specifications of SKB02N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB02N120XT

Power Semiconductors
Figure 7. Typical transfer characteristics
(V
7A
6A
5A
4A
3A
2A
1A
0A
7A
6A
5A
4A
3A
2A
1A
0A
Figure 5. Typical output characteristics
(T
CE
3V
0V
j
= 25 C)
= 20V)
V
CE
T
1V
V
V
j
,
=-40°C
GE
GE
T
COLLECTOR
j
=+25°C
=17V
T
,
5V
15V
13V
11V
j
=+150°C
GATE
9V
7V
2V
-
EMITTER VOLTAGE
3V
-
EMITTER VOLTAGE
7V
4V
5V
9V
6V
11V
7V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
7A
6A
5A
4A
3A
2A
1A
0A
Figure 6. Typical output characteristics
(T
GE
6V
5V
4V
3V
2V
1V
0V
0V
j
-50°C
= 150 C)
= 15V)
V
CE
1V
V
,
T
GE
COLLECTOR
j
,
=17V
JUNCTION TEMPERATURE
0°C
15V
13V
11V
9V
7V
2V
3V
-
50°C
SKB02N120
EMITTER VOLTAGE
4V
100°C
Rev. 2.3
5V
6V
150°C
I
I
I
C
C
C
=4A
=1A
=2A
Oct 07
7V