SKB02N120 Infineon Technologies, SKB02N120 Datasheet - Page 11
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SKB02N120
Manufacturer Part Number
SKB02N120
Description
IGBT Transistors FAST IGBT NPT TECH 1200V 2A
Manufacturer
Infineon Technologies
Datasheet
1.SKB02N120.pdf
(13 pages)
Specifications of SKB02N120
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-263-3
Continuous Collector Current Ic Max
6.2 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
1,200.0 V
Ic(max) @ 25°
6.2 A
Ic(max) @ 100°
2.8 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SKB02N120XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SKB02N120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
SKB02N120
PG-TO263-3-2
Power Semiconductors
11
Rev. 2.3
Oct 07