SKB02N120 Infineon Technologies, SKB02N120 Datasheet - Page 4

• Manufacturer Part Number: SKB02N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 2A
• Manufacturer: Infineon Technologies

Specifications of SKB02N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB02N120XT

Power Semiconductors
12A
10A
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
8A
6A
4A
2A
0A
60W
50W
40W
30W
20W
10W
GE
j
0W
j
10Hz
= +15V/0V, R
25°C
150 C, D = 0.5, V
150 C)
f,
100Hz
T
SWITCHING FREQUENCY
50°C
C
I
,
c
CASE TEMPERATURE
G
= 91 )
75°C
1kHz
T
T
C
CE
C
=110°C
=80°C
= 800V,
100°C
10kHz
I
c
125°C
100kHz
4
0.01A
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
1A
7A
6A
5A
4A
3A
2A
1A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
10V
C
CASE TEMPERATURE
= 25 C, T
150 C)
75°C
-
SKB02N120
EMITTER VOLTAGE
100V
j
100°C
150 C)
Rev. 2.3
1000V
125°C
500 s
DC
t
150 s
20ms
50 s
p
=10 s
Oct 07