SKB02N120 Infineon Technologies, SKB02N120 Datasheet - Page 3

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SKB02N120

Manufacturer Part Number
SKB02N120
Description
IGBT Transistors FAST IGBT NPT TECH 1200V 2A
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKB02N120

Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-263-3
Continuous Collector Current Ic Max
6.2 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
1,200.0 V
Ic(max) @ 25°
6.2 A
Ic(max) @ 100°
2.8 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SKB02N120XT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SKB02N120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
F
F
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
C
j
j
j
j
C C
G E
R
C C
G E
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 5 0 C
=2A ,
=1 5 0 C
F
1 )
1 )
1 )
= 8 00 V , I
1 )
= 8 00 V , I
= 91 ,
= 91 ,
/ d t =2 5 0 A/ s
/ d t =3 0 0 A/ s
3
= 80 0 V, I
= 15 V /0 V ,
= 80 0 V,
= 15 V /0 V ,
=1 8 0n H,
=1 8 0n H,
= 4 0p F
= 4 0p F
Conditions
Conditions
F
F
C
= 2 A,
= 2 A,
= 2A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKB02N120
Value
Value
0.16
0.06
0.22
0.10
0.27
0.11
0.38
0.30
typ.
typ.
260
400
290
110
4.2
6.7
23
16
61
50
26
14
85
90
Rev. 2.3
max.
max.
0.21
0.08
0.29
0.33
0.15
0.48
340
350
102
30
21
80
31
17
Oct 07
Unit
ns
mJ
ns
A
A/ s
Unit
ns
mJ
ns
A
A/ s
C
C

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