FZ2400R12KE3_B9 Infineon Technologies, FZ2400R12KE3_B9 Datasheet - Page 7

• Manufacturer Part Number: FZ2400R12KE3_B9
• Description: IGBT Modules N-CH 1.2KV 3.2KA
• Manufacturer: Infineon Technologies

Specifications of FZ2400R12KE3_B9

• Configuration: Triple
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 3200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 2,400.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 190 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FZ2400R12KE3_B9
!
7
Vorläufige Daten
preliminary data