FZ2400R12KE3_B9 Infineon Technologies, FZ2400R12KE3_B9 Datasheet - Page 2

• Manufacturer Part Number: FZ2400R12KE3_B9
• Description: IGBT Modules N-CH 1.2KV 3.2KA
• Manufacturer: Infineon Technologies

Specifications of FZ2400R12KE3_B9

• Configuration: Triple
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 3200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 2,400.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 190 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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2
2
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5d
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FZ2400R12KE3_B9
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-> *
5c *
5c *
5c *
-> *
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5c *
-> *
-D/ * 1+ -
5c *
-> *
-D/ * 1+ -
= * 1 $
2
-4 = * 1 $ 4 '() * 1 +,
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-
-
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:4 -D/ *
:4
:4
:4
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cF
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* 11
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OBLb.
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-c
MT
5d
5c
Vorläufige Daten
preliminary data
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1
1
9 4
11+
3
4
4
3
4
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$ G!
43
4
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N
N
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$[
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