FZ2400R12KE3_B9 Infineon Technologies, FZ2400R12KE3_B9 Datasheet - Page 6

• Manufacturer Part Number: FZ2400R12KE3_B9
• Description: IGBT Modules N-CH 1.2KV 3.2KA
• Manufacturer: Infineon Technologies

Specifications of FZ2400R12KE3_B9

• Configuration: Triple
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 3200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 2,400.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 190 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
%
%
#TRe * V5cW
#TRe * V5cW
OD76 * 14 Q4 -./ *
OD76 * 14 Q4 -./ *
'
'
xBLb. * V W
xBLb. * V W
%
%
#TRe * V5cW
#TRe * V5cW
OD76 * 14 Q4 -./ *
OD76 * 14 Q4 -./ *
'
'
xBLb. * V W
xBLb. * V W
A
A
A
A
100
80
70
60
50
40
30
20
10
10
0
1
0,001
&
&
&
&
0
CH $ A
CH $ A
CH $ A
CH $ A
$
$
$
$
2
2
2
2
800
#TRe4 '() * 1 +,
xBLb. 2
$
$
$
$
0,01
C
C
C
C
Pv"F Cw
Pv w
1600
-
-
-
-
1
149+
FZ2400R12KE3_B9
4
2400
5c v:w
2
2
4 V
4 V
4 V
4 V
2
2
0,1
V
V
3+
V
V
v w
4 1
4
C
C
C
C
3200
W
W
W
W
W
W
W
W
9
49
4
1
+1
4000
!
!
!
!
!
+4
4
+
4800
10
6
%
%
%
%
#TRe * VODW
#TRe * VODW
#TRe * VODW
#TRe * VODW
5c *
5c *
5c *
5c *
A
A
A
A
90
80
70
60
50
40
30
20
10
0
&
&
&
&
0
:4 -./ *
:4 -./ *
:4 -./ *
:4 -./ *
2
2
2
2
1
#TRe4 '() * 1 +,
C
C
C
C
2
-
-
-
-
3
OD vQw
4 V
4 V
4 V
4 V
V
V
V
V
Vorläufige Daten
preliminary data
4
W
W
W
W
W
W
W
W
5
6
7