BZX79C11 Fairchild Semiconductor, BZX79C11 Datasheet

DIODE ZENER 11V 500MW DO-35

BZX79C11

Manufacturer Part Number
BZX79C11
Description
DIODE ZENER 11V 500MW DO-35
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BZX79C11

Voltage - Zener (nom) (vz)
11V
Voltage - Forward (vf) (max) @ If
1.5V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 8V
Tolerance
±5%
Power - Max
500mW
Impedance (max) (zzt)
20 Ohm
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Operating Temperature
-65°C ~ 200°C
Zener Voltage
11 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
7.2 mV / C
Zener Current
5 mA
Power Dissipation
500 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
20 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Zener Voltage Vz Typ
11V
Power Dissipation Pd
500mW
Operating Temperature Range
-65°C To +200°C
Diode Case Style
DO-35
No. Of Pins
2
Diode Type
Zener
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZX79C11
Manufacturer:
ON/安森美
Quantity:
20 000
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence. This is a preliminary
notification. A Final PCN will be issued when qualification is complete and data is available.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Sun, Brian
E-mail: Brian.Sun@fairchildsemi.com
Phone:
Implementation of change:
Expected 1st Device Shipment Date: 2008/02/14
Earliest Year/Work Week of Changed Product: 0810
Change Type Description: Die Shrink
Description of Change (From): Two type of die dimension: 0.35mm * 0.35mm for 2.0-20V
DO35 product; 0.45mm * 0.45mm for 22-75V DO35 product.
Description of Change (To): Consolidate to one die dimension 0.32 mm * 0.32 mm for
2.4V~75V DO35 product. There is no difference in package dimension, process and electrical
specification after change.
Reason for Change : Consolidate wafer process to improve quality
Qual/REL Plan Numbers : Q20070376
Qualification :
To qualify the small die(0.32mm*0.32mm) to replace the
die(0.35mm*0.35mm,0.45*0.45mm) which is used in the current DO-35 package.
Device #1 BZX55C10
Package:
#Leads:
Environment Stress Detail:
Stress
HTOL
P/C
Standard
Technical Contact:
Name: Zhu, Adams
E-mail: Adams.Zhu@notes.fairchildsemi.com
Phone:
Qualification Stress Test and Sample Size Detail
FORECAST CHANGE NOTIFICATION
Conditions
150C
Readpoints
TP1
168
TP2
500
TP3
1000
Date Issued On : 2007/11/02
Date Created : 2007/10/11
Samples
A
77
PCN# : Q4074105
Pg. 1

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BZX79C11 Summary of contents

Page 1

... This notification is for your information and concurrence. This is a preliminary notification. A Final PCN will be issued when qualification is complete and data is available. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. If you have any questions concerning this change, please contact: ...

Page 2

HTRB JESD22-A108 150C, 80% of re- HTSL JESD22-A103 175C TMCL1 JESD22-A104 -65C, 150C Device #2 BZX55C3V3 Package: #Leads: Environment Stress Detail: Stress P/C Standard HTOL HTRB JESD22-A108 150C, 80% of re- HTSL JESD22-A103 175C TMCL1 JESD22-A104 -65C, 150C Device #3 ...

Page 3

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