MOCD213R1M Fairchild Semiconductor, MOCD213R1M Datasheet

Transistor Output Optocouplers SO-8 DUAL CHAN OPTOC

MOCD213R1M

Manufacturer Part Number
MOCD213R1M
Description
Transistor Output Optocouplers SO-8 DUAL CHAN OPTOC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MOCD213R1M

Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
2 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
2500 Vrms
Maximum Forward Diode Voltage
1.55 V
Maximum Collector Current
150 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MOCD213R1M_NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MOCD213R1M
Manufacturer:
Fairchil
Quantity:
34 000
©2005 Fairchild Semiconductor Corporation
MOCD213M Rev. 1.0.1
MOCD213M
Dual Channel Phototransistor Small Outline
Surface Mount Optocouplers
Features
Applications
Schematic
U.L. recognized (File #E90700, Volume 2)
VDE recognized (File #136616) (add option “V” for
VDE approval, i.e, MOCD213VM)
Dual channel coupler
Convenient plastic SOIC-8 surface mountable
package style
Minimum current transfer ratio 100% with input current
of 10mA
Minimum BV
Standard SOIC-8 footprint, with 0.050" lead spacing
Compatible with dual wave, vapor phase and
IR reflow soldering
High input-output isolation of 2500 V
guaranteed
Feedback control circuits
Interfacing and coupling systems of different
potentials and impedances
General purpose switching circuits
Monitor and detection circuits
CATHODE 1
CATHODE 2
ANODE 1
ANODE 2
CEO
1
2
3
4
of 70 Volts guaranteed
AC(rms)
8
7
6
5
COLLECTOR 1
EMITTER 1
COLLECTOR 2
EMITTER 2
Description
The MOCD213M device consists of two gallium arsenide
infrared emitting diodes optically coupled to two mono-
lithic silicon phototransistor detectors, in a surface
mountable, small outline plastic package. It is ideally
suited for high density applications and eliminates the
need for through-the-board mounting.
www.fairchildsemi.com
April 2009

Related parts for MOCD213R1M

MOCD213R1M Summary of contents

Page 1

... CATHODE 1 2 ANODE 2 3 CATHODE 2 4 ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 Description The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two mono- lithic silicon phototransistor detectors surface mountable, small outline plastic package ideally suited for high density applications and eliminates the need for through-the-board mounting ...

Page 2

... TOTAL DEVICE V Input-Output Isolation Voltage (f = 60Hz min.) ISO P Total Device Power Dissipation @ T D Derate above 25°C T Ambient Operating Temperature Range A T Storage Temperature Range stg ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0 25°C Unless otherwise specified) A Rating = 25° 25° 25° Value ...

Page 3

... For this test, Pins and 4 are common and Pins and 8 are common rating of 2500 V for min. is equivalent to a rating of 3,000 V ISO AC(rms) 4. Current Transfer Ratio (CTR ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0 25°C unless otherwise specified) A Test Conditions I = 30mA ...

Page 4

... I - LED FORWARD CURRENT (mA) F Fig. 3 Output Current vs. Ambient Temperature NORMALIZED 0.1 -80 -60 -40 - – AMBIENT TEMPERATURE ( A ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0 0.1 100 0.01 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 120 o C) Fig. 5 Dark Current vs. Ambient Temperature ...

Page 5

... TEST CIRCUIT INPUT ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 = 10V R L 10% OUTPUT 90% Adjust I to produce I = 2mA F C Figure 6. Switching Time Test Circuit and Waveform 5 WAVEFORMS INPUT PULSE OUTPUT PULSE off www.fairchildsemi.com ...

Page 6

... Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifi ...

Page 7

... Ordering Information Option Order Entry Identifi R2V Marking Information Definitions ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 V VDE 0884 R2 Tape and reel (2500 units per reel) R2V VDE 0884, Tape and reel (2500 units per reel) 1 D213 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – ...

Page 8

... Carrier Tape Specifications 3.50 0.20 0.30 MAX 8.3 0.10 0.1 MAX User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 8.0 0.10 2.0 0.05 4.0 0.10 6.40 0.20 8 Ø1.5 MIN 1.75 0.10 5.5 0.05 12.0 0.3 5.20 0.20 Ø ...

Page 9

... Liquidous Temperature (T Time (t ) Maintained Above (T L Peak Body Package Temperature Time (t ) within 5°C of 260°C P Ramp-down Rate (T Time 25°C to Peak Temperature ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S Tsmax Preheat Area Tsmin t s 120 240 Time 25° ...

Page 10

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ ...

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