H11A817B3SD Fairchild Semiconductor, H11A817B3SD Datasheet - Page 10

• Manufacturer Part Number: H11A817B3SD
• Description: Transistor Output Optocouplers Optocoupler SM-DIP4 Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of H11A817B3SD

• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 18 us
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.2 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 260 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-4 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Lead Free Recommended IR Reflow Condition
Recommended Wave Soldering condition
Profile Feature
Preheat condition
(Tsmin-Tsmax / ts)
Melt soldering zone
Peak temperature (Tp)
Ramp-down rate
Profile Feature
Peak temperature (Tp)
Tsmax
Tsmin
25°C
Tp
ts (Preheat)
Pb-Sn solder assembly
100°C ~ 150°C
6°C/sec max.
60 ~ 120 sec
60 ~ 120 sec
240 +0/-5°C
183°C
10
Time (sec)
For all solder assembly
Max 260°C for 10 sec
Soldering zon
Lead Free assembly
150°C ~ 200°C
6°C/sec max.
60 ~120 sec
260 +0/-5°C
30 ~ 90 sec
Ramp-down
217°C
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