FOD815300 Fairchild Semiconductor, FOD815300 Datasheet - Page 3

• Manufacturer Part Number: FOD815300
• Description: Transistor Output Optocouplers DC Input Darlington Output
• Manufacturer: Fairchild Semiconductor

Specifications of FOD815300

• Maximum Fall Time: 250 us
• Maximum Input Diode Current: 50 mA
• Maximum Rise Time: 300 us
• Output Device: Photodarlington
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 35 V
• Maximum Collector Emitter Saturation Voltage: 1 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 7500 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 80 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 30 C
• Package / Case: PDIP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FODB100, FODB101, FODB102 Rev. 1.0.0
Electrical Characteristics
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Notes:
1. The white dome area is sensitive to high intensity ambient light or any light source in the 500nm to 1200nm
2. CTR bin (FODB100 only)
3. Pin 1 and Pin 2 are shorted as input and Pin 3 and Pin 4 are shorted as output.
EMITTER
DETECTOR
CTR
Symbol
Symbol
Symbol
V
BV
BV
wavelength range. If such a light source is present, the part should be covered or protected. If the white dome is
exposed to such a light source, the output leakage parameter of the phototransistor will increase.
FODB101: 100% – 200%
FODB102: 150% – 300%
CE (SAT)
R
C
I
V
T
T
C
CTR
CEO
V
I
CE(SAT)
ISO
ISO
ISO
PHL
PLH
R
CEO
ECO
CE
t
t
F
r
f
Forward Voltage
Reverse Current
Breakdown Voltage
Collector to Emitter
Emitter to Collector
Collector Dark Current
Capacitance
Steady State Isolation Voltage
Current Transfer Ratio
Saturated Current Transfer
Ratio (Collector to Emitter)
Saturation Voltage
Rise Time (Non-Saturated) I
Fall Time (Non-Saturated)
Propagation Delay
High to Low
Propagation Delay
Low to High
Capacitance (input to output)
Resistance (input to output)
Characteristic
Parameter
Characteristic
(T
(1)
(2)
A
= 25°C Unless otherwise specified)
I
V
I
I
V
V
F
C
E
(3)
R
CE
CE
I
I
I
I
I
I
I
I
I
I
(3)
F
F
F
F
F
C
C
F
F
F
F
= 2mA
= 100µA, I
(3)
= 100µA, I
Test Conditions
= 6V
= 1mA, V
= 1.6mA, V
= 1.0mA, V
= 3.0mA, I
= 1.6mA, I
= 1.6mA, V
= 1.6mA, V
= 1.6mA, V
= 1.6mA, V
= 2mA, V
= 2mA, V
= 75V, I
= 0V, f = 1MHz
RH ≤ 50%, T
V
f = 1MHz
I-O
= 500VDC
F
F
F
Test Conditions
CE
CE
CE
Test Conditions
= 0
= 0
C
C
= 0
CE
CE
CC
CC
CC
CC
3
= 5V
= 1.8mA
= 1.6mA
= 5 V, R
= 5 V, R
= 0.4V
= 0.4V
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
A
= 25°C, t = 1 sec
L
L
= 1k Ω
= 1k Ω
L
L
L
L
Min.
= 750 Ω
= 4.7k Ω
= 750 Ω
= 4.7k Ω
1.0
75
7
Min.
2500
Typ.
10
8
12
Min.
100
100
75
Typ.
0.3
Typ. Max. Unit
Max.
12
19
1
5
3
5
100
1.5
10
Max.
0.5
0.4
www.fairchildsemi.com
Unit
µA
nA
pF
V(rms)
V
V
V
Unit
pF
µs
µs
µs
%
%
Ω
V