SUD50N03-16P-E3 Vishay, SUD50N03-16P-E3 Datasheet

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SUD50N03-16P-E3

Manufacturer Part Number
SUD50N03-16P-E3
Description
MOSFET N-CH D-S 30V TO252
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUD50N03-16P-E3

Input Capacitance (ciss) @ Vds
1150pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Power - Max
40.8W
Mounting Type
*
Package / Case
*
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
37 A
Power Dissipation
6500 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Notes
a.
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Ordering Information: SUD50N03-16P—E3 (Lead Free)
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
30
30
(V)
G
Top View
TO-252
D
S
a
0.024 @ V
0.016 @ V
a
a
Drain Connected to Tab
r
DS(on)
Parameter
Parameter
GS
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
New Product
15
12
(A)
Steady State
T
L = 0 1 mH
L = 0.1 mH
T
T
t v 10 sec
T
T
A
C
A
C
A
a
= 100_C
= 25_C
= 25_C
= 25_C
= 25_C
G
N-Channel MOSFET
D
S
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
AS
thJA
DS
GS
AS
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
D 100% Rg
APPLICATIONS
D High-Side DC/DC
D DDR DC/DC Converter
stg
− Desktop
− Server
Typical
Tested
3.0
18
40
−55 to 175
Limit
SUD50N03-16P
31.25
"20
10.6
40.8
6.5
30
37
15
40
25
Vishay Siliconix
5
a
Maximum
3.7
23
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
V
A
A
1

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SUD50N03-16P-E3 Summary of contents

Page 1

... TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N03-16P—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... SUD50N03-16P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... T − Junction Temperature (_C) J Document Number: 72634 S-40466—Rev. A, 15-Mar-04 New Product 0. −55_C C 0.04 25_C 0.03 125_C 0.02 0.01 0. 100 100 125 150 175 SUD50N03-16P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge − ...

Page 4

... SUD50N03-16P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − www.vishay.com ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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