H11N2VM Fairchild Semiconductor, H11N2VM Datasheet - Page 3

• Manufacturer Part Number: H11N2VM
• Description: High Speed Optocouplers Optocoupler LC Schmitt Trigger
• Manufacturer: Fairchild Semiconductor

Specifications of H11N2VM

• Isolation Voltage: 5300 Vrms
• Maximum Continuous Output Current: 50 mA
• Maximum Fall Time: 12 ns
• Maximum Forward Diode Current: 30 mA
• Maximum Rise Time: 7.5 ns
• Output Device: Logic Gate Photo IC
• Configuration: 1 Channel
• Maximum Baud Rate: 5 MBps
• Maximum Forward Diode Voltage: 2 V
• Maximum Reverse Diode Voltage: 6 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: H11N2VM_NL

©2005 Fairchild Semiconductor Corporation
H11N1M, H11N2M, H11N3M Rev. 1.0.2
Electrical Characteristics
Individual Component Characteristics
Transfer Characteristics
Switching Speed
Isolation Characteristics
*Typical values at T
Notes:
1. Maximum I
2. H11N1: R
EMITTER
DETECTOR
I
V
C
R
Symbol
F(off)
Symbol
Symbol
Symbol
ISO
ISO
ISO
I
would require the LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band
is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA.
CC(off)
I
V
CC(on)
I
I
I
V
C
t
t
V
F(on)
F(off)
I
OH
PHL
PLH
CC
R
F
t
t
J
OL
/ I
r
f
F(on)
E
Input Forward Voltage
Reverse Current
Capacitance
Operating Voltage Range
Supply Current
Output Current, High
F(ON)
Input-Output Isolation Voltage f = 60 Hz, t =1 sec.
Isolation Capacitance
Isolation Resistance
= 910 , H11N2: R
Supply Current
Output Voltage, Low
Turn-On Threshold Current R
Turn-Off Threshold Current R
Hysteresis Ratio
Propagation Delay Time
HIGH-to-LOW
Rise Time
Propagation Delay Time
LOW-to-HIGH
Fall Time
Data Rate
DC Characteristics
AC Characteristics
is the maximum current required to trigger the output. For example, a 3.2mA maximum trigger current
Parameters
A
= 25°C
Parameters
E
= 560 , H11N3: R
(T
A
= 25°C unless otherwise specified.)
I
I
V
V = 0, f = 1.0MHz
I
I
F
F
F
F
R
I
R
I
R
C = 120pF, t
R
C = 120pF, t
R
C = 120pF, t
R
C = 120pF, t
R
= 10mA
= 0.3mA
= 0, V
= 0.3mA, V
F
F
= 5V
L
L
L
L
E
E
E
E
= I
V
V
= 10mA, V
Test Conditions
=270 ,V
=270 , V
Test Conditions
Test Conditions
= 270 , V
= 270 , V
=
=
=
=
I-O
I-O
F(on)
(2)
(2)
(2)
(2)
CC
= 0V, f = 1 MHz
= ±500 VDC
, Figure 1
, Figure 1
, Figure 1
, Figure 1
E
= 5V
Test Conditions
= 240
max.
CC
CC
CC
P
P
P
P
CC
CC
CC
= 1µs,
= 1µs,
= 1µs,
= 1µs,
=5V,
= V
3
= 5V
= 5V
= 5V
= 5V
O
= 15V
(1)
H11N1M
H11N2M
H11N3M
Device
Device
Device
All
All
All
All
All
All
All
All
All
All
All
All
All
All
All
Min.
7500
10
Min.
0.75
11
Min.
Min.
0.65
0.8
2.3
4.1
0.3
4
Typ.*
Typ.*
0.4
1.25
Typ.*
Typ.*
1.4
100
150
6
6.5
7.5
12
5
Max.
Max.
100
100
Max.
Max.
0.6
10
15
10
0.95
330
330
0.5
3.2
2
10
10
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5
Units
V
Units
Units
Units
PEAK
MHz
mA
pF
µA
µA
pF
mA
mA
mA
V
V
ns
ns
ns
ns
V